International audienceTaylor Series coefficients (TSCs) are one of the main factors behind the device's nonlinearity. Mull-bias behaviour of TSCs for GaN HEMT has been extracted using two-tone technique. To extract the higher-order TSCs of the output current, two-tone intermodulation distortion (IMD) measurement along with properly designed load impedance is used at low frequency (50 and 51 MHz) for the accurate prediction of the cross-term derivatives. For the extraction of TSCs of the nonlinear output current, Volterra series analysis is utilized for the accurate reproduction of the harmonic component. Finally, the verification between the measured and simulated IMD products shows good agreement. This simple and straightforward method is ...
This paper discusses the gate to source nonlinear capacitor contribution on small signal intermodula...
International audienceToday, confident design of highly linear MMICs is of primary concern for high-...
0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature ...
International audienceThe third-order intermodulation distortion in AlGaN/GaN high electron mobility...
This paper describes a measurement technique suitable for the characterization of GaN-based FET devi...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
A new method is proposed for the accurate experimental characterization and fully automated extracti...
International audienceThis research is about investigating the third-order intercept point (TOI) and...
In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measu...
A new method for characterization of HEMT distortion parameters, which extracts the coefficents of a...
A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-d...
The considerable variation in intermodulation across wide bandwidths due to trapping and self-heatin...
In this paper a recently proposed identification procedure based on exciting the device under test s...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
This paper discusses the gate to source nonlinear capacitor contribution on small signal intermodula...
International audienceToday, confident design of highly linear MMICs is of primary concern for high-...
0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature ...
International audienceThe third-order intermodulation distortion in AlGaN/GaN high electron mobility...
This paper describes a measurement technique suitable for the characterization of GaN-based FET devi...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measur...
A new method is proposed for the accurate experimental characterization and fully automated extracti...
International audienceThis research is about investigating the third-order intercept point (TOI) and...
In this paper, we present a method for characterizing and analysing GaN-based FET devices. The measu...
A new method for characterization of HEMT distortion parameters, which extracts the coefficents of a...
A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-d...
The considerable variation in intermodulation across wide bandwidths due to trapping and self-heatin...
In this paper a recently proposed identification procedure based on exciting the device under test s...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
This paper discusses the gate to source nonlinear capacitor contribution on small signal intermodula...
International audienceToday, confident design of highly linear MMICs is of primary concern for high-...
0.25 μm gate AlGaN/GaN/SiC HEMT'snonlinearity modelling and characterization over a widetemperature ...