Resistive switching of silicon-silver thin film devices in flexible substrates

Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.FEDER (Fundo Europeu de Desenvolvimento Regional) funds through the COMPETE 2020 Operational Programme for Competitiveness and Internationalisation (POCI), Portugal 2020FCT (Fundacao para a Ciencia e a Tecnologia)Portuguese Foundation for Science and TechnologyMinisterio da Ciencia, Tecnologia e Inovacao [POCI-010145 FEDER007274]Associated LaboratoryInstitute of Nanoscience and NanotechnologyFSE/POPHEuropean Social Fund (ESF)FCTPortuguese Foundation for Science and TechnologyEuropean Commission [SFRH/BD/101661/2014, CEECIND/00464/2017]FCT through the IN Associated LaboratoryNational Infrastructure Roadmap [NORTE-01-0145-FEDER-22090][PTDC/CTM-NAN/122868/2010][PTDC/CTM-NAN/3146/2014][PTDC/NAN-MAT/31688/2017][UID/CTM/50011/2019][UID/EEA/50008/2019][POCI-01-0145-FEDER-016623]