We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour–liquid–solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission electron microscopy, and electron energy loss spectroscopy were employed to investigate the morphology, structure, and composition of the obtained core and core–shell NWs. A single crystalline GeTe core and a polycrystalline Sb2Te3 shell formed the NWs, having core and core–shell diameters in the range of 50–130 nm and an average length up to 7 µm
The controlled growth of chalcogenide nanoscaled phase change material structures can be important t...
Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency,...
We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si s...
We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si subst...
The Metalorganic Chemical Vapor Deposition process was adopted for the first time to grow GeTe nanow...
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrate...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
The interest in the Ge doped Sb–Te chalcogenide alloy is mainly related to phase change memory appli...
In this work, the self-assembly of In3Sb1Te2 and In-doped Sb4Te1 nanowires (NWs) for phase change me...
We report on the self-assembly of core-shell Ge/In-Te nanowires (NWs) on single crystal Si substrate...
Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their gr...
Self-assembled semiconducting (SC) nanowires (NW) are promising candidates for applications in elect...
The controlled growth of chalcogenide nanoscaled phase change material structures can be important t...
Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency,...
We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si s...
We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si subst...
The Metalorganic Chemical Vapor Deposition process was adopted for the first time to grow GeTe nanow...
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrate...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
Controlling material thickness and element interdiffusion at the interface is crucial for many appli...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their gr...
The interest in the Ge doped Sb–Te chalcogenide alloy is mainly related to phase change memory appli...
In this work, the self-assembly of In3Sb1Te2 and In-doped Sb4Te1 nanowires (NWs) for phase change me...
We report on the self-assembly of core-shell Ge/In-Te nanowires (NWs) on single crystal Si substrate...
Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their gr...
Self-assembled semiconducting (SC) nanowires (NW) are promising candidates for applications in elect...
The controlled growth of chalcogenide nanoscaled phase change material structures can be important t...
Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency,...
We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si s...