Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

International audience10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also better reverse performances of diodes with large bend radius