©2010 The American Physical Society. The electronic version of this article is the complete one and can be found online at: http://link.aps.org/doi/10.1103/PhysRevB.81.045415DOI: 10.1103/PhysRevB.81.045415Control over the morphology and structure of nanostructures is essential for their technological applications, since their physical properties depend significantly on their dimensions, crystallographic structure, and growth direction. A combination of polarized Raman (PR) spectroscopy and atomic force microscopy (AFM) is used to characterize the growth direction, the presence of point defects and the morphology of individual ZnO nanobelts. PR-AFM data reveal two growth modes during the synthesis of ZnO nanobelts by physical vapor depositio...
We report on the effect of the morphological modification on optical properties and polarization of ...
The Young’s modulus of ZnO nanobelts was measured with an atomic force microscope by means of the mo...
ZnO is an n-type semiconductor having a large band gap of 3.37eV. This study optimizes the fabricati...
©2009 American Institute of Physics. The electronic version of this article is the complete one and ...
©2004 American Institute of Physics. The electronic version of this article is the complete one and ...
©2005 American Institute of Physics. The electronic version of this article is the complete one and ...
In quasi-one-dimensional polar nanostructures the relative orientation of the long and polar axes wi...
©2003 The American Physical Society. The electronic version of this article is the complete one and ...
Supported ZnO nanorods with a different degree of preferential orientation and tunable morphological...
©2004 American Institute of Physics. The electronic version of this article is the complete one and ...
The authors demonstrated an investigation of the real-time growth of ZnO nanosheets via in situ obse...
International audienceZnO is a promising material for the fabrication of light emitting devices. One...
Abstract. Zinc oxide is an important semiconducting and piezoelectric material. Structurally, due to...
©2005 American Institute of Physics. The electronic version of this article is the complete one and ...
In this study, vertically aligned zinc oxide (ZnO) nanorod (NR) arrays were grown with the 2-step me...
We report on the effect of the morphological modification on optical properties and polarization of ...
The Young’s modulus of ZnO nanobelts was measured with an atomic force microscope by means of the mo...
ZnO is an n-type semiconductor having a large band gap of 3.37eV. This study optimizes the fabricati...
©2009 American Institute of Physics. The electronic version of this article is the complete one and ...
©2004 American Institute of Physics. The electronic version of this article is the complete one and ...
©2005 American Institute of Physics. The electronic version of this article is the complete one and ...
In quasi-one-dimensional polar nanostructures the relative orientation of the long and polar axes wi...
©2003 The American Physical Society. The electronic version of this article is the complete one and ...
Supported ZnO nanorods with a different degree of preferential orientation and tunable morphological...
©2004 American Institute of Physics. The electronic version of this article is the complete one and ...
The authors demonstrated an investigation of the real-time growth of ZnO nanosheets via in situ obse...
International audienceZnO is a promising material for the fabrication of light emitting devices. One...
Abstract. Zinc oxide is an important semiconducting and piezoelectric material. Structurally, due to...
©2005 American Institute of Physics. The electronic version of this article is the complete one and ...
In this study, vertically aligned zinc oxide (ZnO) nanorod (NR) arrays were grown with the 2-step me...
We report on the effect of the morphological modification on optical properties and polarization of ...
The Young’s modulus of ZnO nanobelts was measured with an atomic force microscope by means of the mo...
ZnO is an n-type semiconductor having a large band gap of 3.37eV. This study optimizes the fabricati...