International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal oxide sols in solutions of amines in organic solvents at 160 °C, followed by heating at the resulting temperature (80–110 °C) for 3 h. The obtained nanoparticles were extracted by centrifugation, washed and heat-treated at 500 °C for final purification and eventual completion of the crystallization process. The preparation process and the final products were characterized by X-ray diffraction, Raman and Fourier transform infrared spectroscopy and transmission electron microscopy. Very small nanoparticles with a mean size of about 6 nm were obtained, generally constituted by single crystals, chemically pure and defect free. The nanocrystals c...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
In2O3 with wide band gap (3.6 eV) and visible light transparency is a very important n-type semicond...
International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal...
International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal...
International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal...
SnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal oxide sols in solutio...
SnO2, TiO2, and In2O3 sols were prepared by a chemically modified sol-gel process. By injecting the ...
In2O3 nanocrystals were prepared by injection of In2O3 sol in a hot (160 degrees C) solution of tetr...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
In2O3 with wide band gap (3.6 eV) and visible light transparency is a very important n-type semicond...
International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal...
International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal...
International audienceSnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal...
SnO2 and In2O3 nanocrystals were prepared by injecting the corresponding metal oxide sols in solutio...
SnO2, TiO2, and In2O3 sols were prepared by a chemically modified sol-gel process. By injecting the ...
In2O3 nanocrystals were prepared by injection of In2O3 sol in a hot (160 degrees C) solution of tetr...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceMetal oxide (SnO2, TiO2, In2O3, ZnO) sols are prepared by various sol-gel proc...
International audienceIn2O3 nanocrystals were prepared by injecting In2O3 sols in a coordinating env...
In2O3 with wide band gap (3.6 eV) and visible light transparency is a very important n-type semicond...