Structural Properties of Tensile-Strained Si Layers Grown on Si<sub>1-x</sub>Ge<sub>x</sub> Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

Hartmann, Jean-Michel
Rouchon, Denis
Mermoux, Michel
Billon, Thierry

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Publication date

January 2007

DOI

10.1149/1.2728868

Publisher

Electrochemical Society, Inc.

Abstract

International audienceWe have studied the structural properties of tensile-strained Si (sSi) layers grown on polished Si0.8Ge0.2 and Si0.7Ge0.3 virtual substrates as a function of their thickness. The surface morphology, the tensile-strain, the linear density of defects and the threading dislocation density have been quantified for different sSi layer thickness. Results are compared to those previously obtained on sSi layers grown on top of polished Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates (ECS Trans. 3, No. 7, 319 (2006)

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Structural Properties of Tensile-Strained Si Layers Grown on Si<sub>1-x</sub>Ge<sub>x</sub> Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

Abstract

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Structural Properties of Tensile-Strained Si Layers Grown on Si<sub>1-x</sub>Ge<sub>x</sub> Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

Abstract

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