International audienceWith the development of multi-level, multiphase or network converters requiring the implementation of numerous distinct power transistor gate drivers, the control signal insulation is becoming more and more important in power converters. This paper presents an isolation technique based on a coreless transformer integrated in a CMOS silicon die together with the gate driver and other required functions. The associated demodulation circuit will also be presented, as the control signal must be modulated at a high frequency through the coreless transformer. The chosen design methodology will be explained and experimental results will be shown in order to validate the functionality
This paper describes the modeling and implementation of coreless PCB-based transformer with `multipl...
International audienceThis paper deals with the design, the realization and the characterization of ...
The french industrial project MEGaN targets the development of power module based on GaN HEMT transi...
International audienceThis paper presents several innovative solutions in the view of transferring g...
In this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The tran...
Gate drive circuits for power MOSFET's and insulated gate bipolar transistors (IGBT's) often require...
Ces travaux de thèse s’inscrivent dans le cadre d’une collaboration entre les laboratoires G2ELAB et...
Gate drive circuits for modern power electronic switches, such as MOSFET and insulated gate bipolar ...
International audienceThis paper deals with the design and the implementation of an integrated gate ...
In this paper, a novel silicon-embedded coreless transformer (SECT) is proposed and demonstrated for...
Gate drive circuits for power MOSFET's and IGBT's often require electrical insulation. Different met...
This paper describes the modeling and implementation of a coreless printed circuit board (PCB)-based...
This thesis work focuses on the design and the implementation of a generic gate driver circuit for p...
This thesis present acoreless Printed Circuit Board (PCB) transformer developed for a full-bridge ...
Abstract The high temperature (HT) characteristics of silicon carbide (SiC) devices enable power ele...
This paper describes the modeling and implementation of coreless PCB-based transformer with `multipl...
International audienceThis paper deals with the design, the realization and the characterization of ...
The french industrial project MEGaN targets the development of power module based on GaN HEMT transi...
International audienceThis paper presents several innovative solutions in the view of transferring g...
In this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The tran...
Gate drive circuits for power MOSFET's and insulated gate bipolar transistors (IGBT's) often require...
Ces travaux de thèse s’inscrivent dans le cadre d’une collaboration entre les laboratoires G2ELAB et...
Gate drive circuits for modern power electronic switches, such as MOSFET and insulated gate bipolar ...
International audienceThis paper deals with the design and the implementation of an integrated gate ...
In this paper, a novel silicon-embedded coreless transformer (SECT) is proposed and demonstrated for...
Gate drive circuits for power MOSFET's and IGBT's often require electrical insulation. Different met...
This paper describes the modeling and implementation of a coreless printed circuit board (PCB)-based...
This thesis work focuses on the design and the implementation of a generic gate driver circuit for p...
This thesis present acoreless Printed Circuit Board (PCB) transformer developed for a full-bridge ...
Abstract The high temperature (HT) characteristics of silicon carbide (SiC) devices enable power ele...
This paper describes the modeling and implementation of coreless PCB-based transformer with `multipl...
International audienceThis paper deals with the design, the realization and the characterization of ...
The french industrial project MEGaN targets the development of power module based on GaN HEMT transi...