Silicon carbide based one-dimensional nanostructure growth: towards electronics and biology perspectives

International audienceOne-dimensional (1D) nanostructures such as nanowires or nanotubes have attracted great interest in fundamental research as well as potential breakthrough applications. Among many materials, silicon carbide (SiC) has very interesting physical, chemical and electronic properties. This is why silicon carbide based 1D nanostructures, which combine excellent intrinsic properties with low dimensionality, have great potential. In this topical review, the growth of SiC 1D nanostructures is addressed as well as the potential applications of these peculiar nano-objects. This subject is first introduced by the interest in this material and by a summing up of the state of the art of SiC nanowire growth. In the second part, Si–SiC core–shell nanowire synthesis is described, followed by the growth of SiC nanotubes. In particular, these two kinds of nanostructures can be obtained via Si nanowire carburization. The third part is dedicated to the control of the synthesis from Si–SiC core–shell nanowires to SiC nanotubes using this original technique. Then, an alternative top-down approach to synthesize SiC 1D nanostructures is described. Finally, preliminary results towards integration for biology, energy and electronics are provided