Optimizing Gallium Arsenide multiple quantum wells as high-performance photovoltaic devices

We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/AlxGa1−xAs quantum well structure can be optimized