A two terminal optically addressed image processing device based on two stacked sensing/switching p-i-n a-SiC:H diodes is presented. The charge packets are injected optically into the p-i-n sensing photodiode and confined at the illuminated regions changing locally the electrical field profile across the p-i-n switching diode. A red scanner is used for charge readout. The various design parameters and addressing architecture trade-offs are discussed. The influence on the transfer functions of an a-SiC:H sensing absorber optimized for red transmittance and blue collection or of a floating anode in between is analysed. Results show that the thin a-SiC:H sensing absorber confines the readout to the switching diode and filters the light allowin...
In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device fo...
AbstractA pi’n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior ...
In recent works large area hydrogenated amorphous silicon p-i-n structures with low conductivity dop...
ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transpo...
We report in this paper the recent advances we obtained in optimizing a color image sensor based on ...
AbstractA pi’n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior ...
Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity ...
A pi'n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior as image...
Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser...
In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented a...
In this paper we present results on the optimization of device architectures for colour and imaging ...
An optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The...
Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplex...
Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been wide...
Red, green and blue optical signals were directed to an a-SiC:H multilayered device, each one with a...
In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device fo...
AbstractA pi’n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior ...
In recent works large area hydrogenated amorphous silicon p-i-n structures with low conductivity dop...
ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transpo...
We report in this paper the recent advances we obtained in optimizing a color image sensor based on ...
AbstractA pi’n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior ...
Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity ...
A pi'n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior as image...
Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser...
In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented a...
In this paper we present results on the optimization of device architectures for colour and imaging ...
An optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The...
Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplex...
Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been wide...
Red, green and blue optical signals were directed to an a-SiC:H multilayered device, each one with a...
In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device fo...
AbstractA pi’n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior ...
In recent works large area hydrogenated amorphous silicon p-i-n structures with low conductivity dop...