This article presents the design and test of a receiver front end aimed at LMDS applications at 28.5 GHz. It presents a system-level design after which the receiver was designed. The receiver comprises an LNA, quadrature mixer and quadrature local oscillator. Experimental results at 24 GHz center frequency show a conversion voltage gain of 15 dB and conversion noise figure of 14 5 dB. The receiver operates from a 2 5 V power supply with a total current consumption of 31 mA
A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transce...
Silicon CMOS Technology is now the preferred process for low power wireless communication devices, a...
[[abstract]]This article describes a monolithic receiver front-end comprising a low-noise amplifier,...
This article presents the design and test of a receiver front end aimed at LMDS applications at 28.5...
This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequenc...
[[abstract]]This article describes a monolithic receiver front end comprising a low-noise amplifier ...
Radio frequency (RF) circuit is having a rapid growth in wireless telecommunication. The increasing ...
DoctorFirstly, an ultra-low-power fully integrated wide band receiver for WSN using passive mixer-fi...
Abstract:This doctoral thesis is addresses two topics in integrated circuit design: multiband direct...
This paper presents the design of a high gain, low noise direct conversion Radio frequency(RF) front...
International audienceThe research on the design of receiver front-ends for very high data-rate comm...
This paper presents the design of a high gain, low noise direct conversion Radio frequency(RF) front...
[[abstract]]This paper reports the design and analysis of 21-29-GHz CMOS low-noise amplifier (LNA), ...
This report aims to provide a comprehensive review as well as the design of the various high frequen...
The increasing demand for high data rates in wireless communication systems is in-creasing the requi...
A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transce...
Silicon CMOS Technology is now the preferred process for low power wireless communication devices, a...
[[abstract]]This article describes a monolithic receiver front-end comprising a low-noise amplifier,...
This article presents the design and test of a receiver front end aimed at LMDS applications at 28.5...
This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequenc...
[[abstract]]This article describes a monolithic receiver front end comprising a low-noise amplifier ...
Radio frequency (RF) circuit is having a rapid growth in wireless telecommunication. The increasing ...
DoctorFirstly, an ultra-low-power fully integrated wide band receiver for WSN using passive mixer-fi...
Abstract:This doctoral thesis is addresses two topics in integrated circuit design: multiband direct...
This paper presents the design of a high gain, low noise direct conversion Radio frequency(RF) front...
International audienceThe research on the design of receiver front-ends for very high data-rate comm...
This paper presents the design of a high gain, low noise direct conversion Radio frequency(RF) front...
[[abstract]]This paper reports the design and analysis of 21-29-GHz CMOS low-noise amplifier (LNA), ...
This report aims to provide a comprehensive review as well as the design of the various high frequen...
The increasing demand for high data rates in wireless communication systems is in-creasing the requi...
A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transce...
Silicon CMOS Technology is now the preferred process for low power wireless communication devices, a...
[[abstract]]This article describes a monolithic receiver front-end comprising a low-noise amplifier,...