Polycrystalline samples of (CuInSe2)1-x(CoSe)x alloys were prepared by the normal melt and anneal technique in the composition range 0 < x 2/3. The obtained ingots were characterized by scanning electron microscopy, X-ray diffraction and differential thermal analysis techniques. A sample with x = 2/3 (prepared a posteriori) was also studied by the Raman shift technique. The results showed a complex behavior of the phase diagram. The phase () with chalcopyrite structure exists in a narrow interval 0 < x < 0.1 in the composition range; then, for 0.1 < x < 0.25, the ordered phase gradually transforms into a disordered () phase where the cation sites are multi-occupied (Cu, Co and In) at random. For 0.25 < x < 0.35, two phases were observed, th...
A polycrystalline ingot (30mm long, 10mm diameter) of the alloy (CuInTe2)1-x(NbTe)x with x=0.5 has b...
Cu-poor compositions are key for obtaining high efficiency Cu(In,Ga)Se2 (CIGSe) devices. These condi...
Formation of CuInSe2 (CIS) thin films from aqueous solution containing citrate as complexing agent i...
The CuInSe2 and CuSbSe2 ternary compounds and alloys of the CuSbSe2 1 x CuInSe2 x system with the...
This paper deals with the analysis of the vibrational and crystalline properties of CuInC2 C S, Se ...
This work reports the surface and in depth resolved Raman scattering analysis of polycrystalline CuI...
Polycrystalline samples belonging to the (CuAlSe2)1-x(TaSe)x alloys system, in the composition inter...
Quaternary chalcogenides of general composition CuInSnXVI4 (XVI = O, S, Se, Te) were prepared by the...
This paper deals with the analysis of the vibrational and crystallographic properties of CuInC2 sC=S...
This work presents a low-cost, non-vacuum, and facile process for fabrication of CuInSe2...
Access restricted to the OSU CommunityPolycrystalline CuInSe₂ (CIS) and related materials, are promi...
For the production of high efficiency thin film, Cu In,Ga Se2 solar cells, absorber layers with grai...
The growth of polycrystalline CuInSe2 and CuInS2 thin films from metallic precursor layers is invest...
High-quality CuInSe2 thin films have been prepared using a two stages process. Cu and In were co-dep...
The ferroelastic high temperature structural phase transition of CuInSe2, from tetragonal chalcopyr...
A polycrystalline ingot (30mm long, 10mm diameter) of the alloy (CuInTe2)1-x(NbTe)x with x=0.5 has b...
Cu-poor compositions are key for obtaining high efficiency Cu(In,Ga)Se2 (CIGSe) devices. These condi...
Formation of CuInSe2 (CIS) thin films from aqueous solution containing citrate as complexing agent i...
The CuInSe2 and CuSbSe2 ternary compounds and alloys of the CuSbSe2 1 x CuInSe2 x system with the...
This paper deals with the analysis of the vibrational and crystalline properties of CuInC2 C S, Se ...
This work reports the surface and in depth resolved Raman scattering analysis of polycrystalline CuI...
Polycrystalline samples belonging to the (CuAlSe2)1-x(TaSe)x alloys system, in the composition inter...
Quaternary chalcogenides of general composition CuInSnXVI4 (XVI = O, S, Se, Te) were prepared by the...
This paper deals with the analysis of the vibrational and crystallographic properties of CuInC2 sC=S...
This work presents a low-cost, non-vacuum, and facile process for fabrication of CuInSe2...
Access restricted to the OSU CommunityPolycrystalline CuInSe₂ (CIS) and related materials, are promi...
For the production of high efficiency thin film, Cu In,Ga Se2 solar cells, absorber layers with grai...
The growth of polycrystalline CuInSe2 and CuInS2 thin films from metallic precursor layers is invest...
High-quality CuInSe2 thin films have been prepared using a two stages process. Cu and In were co-dep...
The ferroelastic high temperature structural phase transition of CuInSe2, from tetragonal chalcopyr...
A polycrystalline ingot (30mm long, 10mm diameter) of the alloy (CuInTe2)1-x(NbTe)x with x=0.5 has b...
Cu-poor compositions are key for obtaining high efficiency Cu(In,Ga)Se2 (CIGSe) devices. These condi...
Formation of CuInSe2 (CIS) thin films from aqueous solution containing citrate as complexing agent i...