International audienceThe infrared spectroscopic properties of selected OH defects in zircon are investigated by first-principles calculations. The explicit treatment of the coupled nature of OH motions in the stretching modes, together with the calculation of the intensity and polarization of absorption bands, makes it possible to directly compare theoretical and experimental data. The bands observed at 3,420 cm-1 (polarization parallel to c axis) and 3,385 cm-1 (polarization perpendicular to c axis) in natural and synthetic samples correspond to the IR-active vibrational modes of the hydrozircon defect, that is, fully protonated Si vacancy. The broad band observed at 3,515 cm-1 in the spectrum of zircon crystals grown in F-rich environmen...
Using first principles calculations we have studied the formation energies, electron and hole affin...
Hydroxyl defects in pure forsterite are usually ascribed to incorporation of protons fully compensat...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
The infrared spectroscopic properties of selected OH defects in zircon are investigated by first-pri...
International audienceThe infrared spectroscopic properties of selected defects in forsterite are in...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
The infrared spectra of natural quartz, and synthetic quartz produced in conditions relevant to natu...
A survey of hydrous species in zircon from a number of localities with a range of occurrences and st...
The structure and the polarized infrared absorption spectrum of OH-defects in wadsleyite (beta-Mg2Si...
We investigate structural, electronic, dynamical, and dielectric properties of zircon (ZrSiO4) withi...
The infrared spectroscopic properties of selected defects in orthoenstatite are investigated by firs...
International audienceHydroxyl defects in pure forsterite are usually ascribed to incorporation of p...
Using first principles calculations we have studied the formation energies, electron and hole affin...
Hydroxyl defects in pure forsterite are usually ascribed to incorporation of protons fully compensat...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
The infrared spectroscopic properties of selected OH defects in zircon are investigated by first-pri...
International audienceThe infrared spectroscopic properties of selected defects in forsterite are in...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
International audienceThe infrared spectra of natural quartz, and synthetic quartz produced in condi...
The infrared spectra of natural quartz, and synthetic quartz produced in conditions relevant to natu...
A survey of hydrous species in zircon from a number of localities with a range of occurrences and st...
The structure and the polarized infrared absorption spectrum of OH-defects in wadsleyite (beta-Mg2Si...
We investigate structural, electronic, dynamical, and dielectric properties of zircon (ZrSiO4) withi...
The infrared spectroscopic properties of selected defects in orthoenstatite are investigated by firs...
International audienceHydroxyl defects in pure forsterite are usually ascribed to incorporation of p...
Using first principles calculations we have studied the formation energies, electron and hole affin...
Hydroxyl defects in pure forsterite are usually ascribed to incorporation of protons fully compensat...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...