For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has become an overriding concern for VLSI circuit designers. ITRS reports that leakage power dissipation may come to dominate total power consumption [1]. We propose a novel approach, named "sleepy keeper", which reduces leakage current while saving exact logic state. Sleepy keeper uses traditional sleep transistors plus two additional transistors - driven by a gate's already calculated output - to save state during sleep mode. Dual Vth values can be applied to sleepy keeper in order to dramatically reduce subthreshold leakage current. In short, like the sleepy stack approach, sleepy keeper achieves leakage power reduction equivalent to the sleep and zig...
With the growing scaling of technology, leakage power dissipation has become a critical issue of VLS...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
Abstract—For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has...
This technical report elaborates on the methodology and findings presented in “Sleepy Stack Reductio...
This technical report explains a new approach to low leakage power Very Large Scale Integration (VLS...
New low power solutions for Very Large Scale Integration (VLSI) are proposed. Especially, we focus o...
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects tha...
The integrated circuit design has important role of various parameters are considering for design th...
<div>Static power consumption is a major concern in nanometre technologies. Along with technology sc...
Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low...
This paper presents a technique for minimizing sub threshold leakage current using stacked sleep tec...
Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used ...
This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our ...
With the growing scaling of technology, leakage power dissipation has become a critical issue of VLS...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
Abstract—For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has...
This technical report elaborates on the methodology and findings presented in “Sleepy Stack Reductio...
This technical report explains a new approach to low leakage power Very Large Scale Integration (VLS...
New low power solutions for Very Large Scale Integration (VLSI) are proposed. Especially, we focus o...
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects tha...
The integrated circuit design has important role of various parameters are considering for design th...
<div>Static power consumption is a major concern in nanometre technologies. Along with technology sc...
Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low...
This paper presents a technique for minimizing sub threshold leakage current using stacked sleep tec...
Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used ...
This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our ...
With the growing scaling of technology, leakage power dissipation has become a critical issue of VLS...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...