ISBN 2-913329-58-8This thesis aims at the study of the behavior of digital processors with respect to one of the effects of radiation environment - the Single Event Upset phenomenon, also called upset - which may modify the content of memory elements as the result of the silicon ionization resulting from the impact of charged particles. The consequences of upsets for a given application depend on both the occurrence instant and the perturbed memory element, and can go from innocuous result errors to system crashes which may provoke the loose of control of a space vehicle. As design hardening techniques cannot completely guarantee the upset immunity for circuits devoted to space applications, error rate estimation methods, based on radiation...
ISBN : 978-2-84813-137-5The reduction of electrical parameters of transistors, resulting of the prog...
ISBN : 978-2-84813-137-5The reduction of electrical parameters of transistors, resulting of the prog...
The reduction of electrical parameters of transistors, resulting of the progress done in the IC's ma...
ISBN 2-913329-58-8This thesis aims at the study of the behavior of digital processors with respect t...
This thesis aims at the study of the behavior of digital processors with respect to one of the effec...
ISBN 2-84813-004-0This thesis is devoted to the study of a software methodology for detection of the...
ISBN 2-84813-004-0This thesis is devoted to the study of a software methodology for detection of the...
International audienceThe effects of transient bit flips on the operation of processor based archite...
The effects of transient bit flips on the operation of processor based architectures is investigated...
Reducing the dimensions of transistors increases the soft-errors sensitivity of integrated circuits ...
Reducing the dimensions of transistors increases the soft-errors sensitivity of integrated circuits ...
International audienceThis paper presents a new fault injection method based on the CEU (Code Emulat...
International audienceThis paper presents a new fault injection method based on the CEU (Code Emulat...
International audienceThis paper presents a new fault injection method based on the CEU (Code Emulat...
The main objective of this thesis is to develop techniques that can beused to analyze and mitigate t...
ISBN : 978-2-84813-137-5The reduction of electrical parameters of transistors, resulting of the prog...
ISBN : 978-2-84813-137-5The reduction of electrical parameters of transistors, resulting of the prog...
The reduction of electrical parameters of transistors, resulting of the progress done in the IC's ma...
ISBN 2-913329-58-8This thesis aims at the study of the behavior of digital processors with respect t...
This thesis aims at the study of the behavior of digital processors with respect to one of the effec...
ISBN 2-84813-004-0This thesis is devoted to the study of a software methodology for detection of the...
ISBN 2-84813-004-0This thesis is devoted to the study of a software methodology for detection of the...
International audienceThe effects of transient bit flips on the operation of processor based archite...
The effects of transient bit flips on the operation of processor based architectures is investigated...
Reducing the dimensions of transistors increases the soft-errors sensitivity of integrated circuits ...
Reducing the dimensions of transistors increases the soft-errors sensitivity of integrated circuits ...
International audienceThis paper presents a new fault injection method based on the CEU (Code Emulat...
International audienceThis paper presents a new fault injection method based on the CEU (Code Emulat...
International audienceThis paper presents a new fault injection method based on the CEU (Code Emulat...
The main objective of this thesis is to develop techniques that can beused to analyze and mitigate t...
ISBN : 978-2-84813-137-5The reduction of electrical parameters of transistors, resulting of the prog...
ISBN : 978-2-84813-137-5The reduction of electrical parameters of transistors, resulting of the prog...
The reduction of electrical parameters of transistors, resulting of the progress done in the IC's ma...