Jury : Mme C. LEBORGNE Professeur (GREMI, Orléans), Président M A. CLAVERIE Directeur de Recherche (CEMES, Toulouse), Rapporteur M A. VAN VEEN Professeur (Delft University of Technology, Pays Bas), Rapporteur M S. ASHOK Professeur (Pennsylvania State University, USA), Examinateur M B. PICHAUD Professeur (Université d'Aix-Marseille III), Examinateur M E. NTSOENZOK Ingénieur de recherche (CERI,Orléans), Directeur de thèseIn this study, we were interested in cavities induce by helium implantation in silicon. We wanted to determine the mechanisms which were involved in cavities formation and growth (Ostwald Ripening or Migration Coalescence). We used implantation energies from 10 keV to 1,55 MeV with implantation doses from 1.45.1016 to 1017 He...
This work is a fundamental study of the effects of helium (He) implantation into polycrystalline sil...
This work is a fundamental study of the effects of helium (He) implantation into polycrystalline sil...
Cavities in single crystalline silicon are shown to act as gettering centers for the vacancies produ...
He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures rangin...
The formation of helium induced cavities in silicon is studied as a function of implant energy (10 a...
L endommagement induit par implantation d hélium dans le carbure de silicium a été étudié par DRX et...
The formation of helium induced cavities in silicon is studied as a function of implant energy (10 a...
Les défauts introduits par l'implantation d'hélium dans le silicium et dans le carbure de silicium o...
He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures rangin...
L'implantation d'hydrogène à forte dose est utilisée dans le procédé Smart Cut(tm) afin de transfére...
The work presented in this Ph.D thesis has been done in the Laboratoire de Métallurgie Physique at t...
A cross-sectional transmission electron microscope investigation of dose dependence and annealing be...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...
A cross-sectional transmission electron microscope investigation of dose dependence and annealing be...
This work is a fundamental study of the effects of helium (He) implantation into polycrystalline sil...
This work is a fundamental study of the effects of helium (He) implantation into polycrystalline sil...
Cavities in single crystalline silicon are shown to act as gettering centers for the vacancies produ...
He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures rangin...
The formation of helium induced cavities in silicon is studied as a function of implant energy (10 a...
L endommagement induit par implantation d hélium dans le carbure de silicium a été étudié par DRX et...
The formation of helium induced cavities in silicon is studied as a function of implant energy (10 a...
Les défauts introduits par l'implantation d'hélium dans le silicium et dans le carbure de silicium o...
He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures rangin...
L'implantation d'hydrogène à forte dose est utilisée dans le procédé Smart Cut(tm) afin de transfére...
The work presented in this Ph.D thesis has been done in the Laboratoire de Métallurgie Physique at t...
A cross-sectional transmission electron microscope investigation of dose dependence and annealing be...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...
A cross-sectional transmission electron microscope investigation of dose dependence and annealing be...
This work is a fundamental study of the effects of helium (He) implantation into polycrystalline sil...
This work is a fundamental study of the effects of helium (He) implantation into polycrystalline sil...
Cavities in single crystalline silicon are shown to act as gettering centers for the vacancies produ...