Carbon nanotubes have excellent potential as basic building blocks for nanometer scale electron devices. Of particular interest in this context are their electron transport properties at high electric fields and at ambient temperature. Because the envisioned device switching times are very short and device dimensions small, not only steady-state, but also transient phenomena need to be explored. In this study are presented results of ensemble Monte Carlo simulations for carbon nanotubes, focusing particularly on semiconducting, single wall, zigzag (n,0) structures of wide ranging diameters. The basis for the Monte Carlo simulations are electronic structure calculations in the framework of a tight binding model. The principal scattering mech...
Abstract—The effects of quasi-ballistic and quantum transport on the operation and the performance o...
We determined the Landauer ballistic conductance of pristine nanotubes at finite temperature via a n...
Carbon nanotubes exhibit excellent field-emission behavior characterized by low turn-on fields and l...
Since the advent of nanoscale material based electronic devices, there has been a considerable inter...
In recent years, significant progress in understanding the physics of carbon nanotube electronic dev...
Pour continuer la course à la miniaturisation des composants microélectronique, les nanotubes de car...
Recently, excellent properties have been realised from structures formed by carbon nanotubes. This p...
We studied the stationary electron transport of semiconduction single-wall straight and helically co...
This chapter describes the properties of metallic and semiconducting carbon nanotubes and their self...
In recent years, the understanding and accurate simulation of carbon nanotube-based transistors has ...
This chapter focuses on the general theory of the electron transport properties of carbon nanotubes,...
Projected to be a material of scientific legend, carbon nanotubes (CNTs) exhibit a variety of intrig...
The technological interest in a material depends very much on its electrical, magnetic, optical and/...
Simulation studies of carbon nanotube field-effect transistors (CNFETs) are presented using models o...
Charge transfer mechanism in carbon nanotubes (CNTs) from the scattering-limited Ohmic transport to ...
Abstract—The effects of quasi-ballistic and quantum transport on the operation and the performance o...
We determined the Landauer ballistic conductance of pristine nanotubes at finite temperature via a n...
Carbon nanotubes exhibit excellent field-emission behavior characterized by low turn-on fields and l...
Since the advent of nanoscale material based electronic devices, there has been a considerable inter...
In recent years, significant progress in understanding the physics of carbon nanotube electronic dev...
Pour continuer la course à la miniaturisation des composants microélectronique, les nanotubes de car...
Recently, excellent properties have been realised from structures formed by carbon nanotubes. This p...
We studied the stationary electron transport of semiconduction single-wall straight and helically co...
This chapter describes the properties of metallic and semiconducting carbon nanotubes and their self...
In recent years, the understanding and accurate simulation of carbon nanotube-based transistors has ...
This chapter focuses on the general theory of the electron transport properties of carbon nanotubes,...
Projected to be a material of scientific legend, carbon nanotubes (CNTs) exhibit a variety of intrig...
The technological interest in a material depends very much on its electrical, magnetic, optical and/...
Simulation studies of carbon nanotube field-effect transistors (CNFETs) are presented using models o...
Charge transfer mechanism in carbon nanotubes (CNTs) from the scattering-limited Ohmic transport to ...
Abstract—The effects of quasi-ballistic and quantum transport on the operation and the performance o...
We determined the Landauer ballistic conductance of pristine nanotubes at finite temperature via a n...
Carbon nanotubes exhibit excellent field-emission behavior characterized by low turn-on fields and l...