Fe-implanted SiC as a potential DMS: X-ray diffraction and rutherford backscattering and channelling study

International audienceSingle crystalline (0 0 0 1)-oriented 6H-SiC samples were implanted at 380 degrees C with low-energy Fe ions (in the 100 keV range) with the aim of synthesizing so-called diluted magnetic semiconductors. X-ray diffraction and Rutherford backscattering spectrometry and channeling are used to study the microstructural changes in these Fe-implanted SiC crystals submitted to furnace annealing and laser processing, both treatments being performed in order to eliminate the implantation-induced defects. (C) 2010 Elsevier B.V. All rights reserved