International audienceWe demonstrate single-nanowire photodetectors based on nanowires containing GaN/AlN quantum disc heterostructures. The structural and electronic properties are investigated by photocurrent and microphotoluminescence spectroscopy, as well as scanning transmission electron microscopy. Single-nanowire photodetectors are visible-blind with photoresponse in the ultraviolet spectral range arising from interband absorption in the multi-quantum disc GaN/AlN heterostructure. The photoconductive gain as high as 10(4) is measured. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei
\u3cp\u3eSeveral of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes c...
International audienceIn this work, we compare the photodetector performance of single nearly defect...
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowire...
International audienceWe demonstrate single-nanowire photodetectors based on nanowires containing Ga...
arXiv:1604.07978v2We have characterized the photodetection capabilities of single GaN nanowires inco...
International audienceWe report a systematic study of the luminescence properties of AlxGa1-xN/GaN s...
International audienceWe report on the fabrication and characterization of single nitride nanowire v...
International audienceWe present a study of GaN single-nanowire ultraviolet photodetectors with an e...
Semiconductor nanowires are nanostructures with lengths up to few microns and small cross sections (...
International audienceThe interest in nanowire photodetectors stems from their unique properties, su...
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 perio...
International audienceThe electronic properties of GaN nanowires containing AlN/GaN multiple quantum...
International audienceAbstract Molecular beam epitaxy growth and optical properties of GaN quantum d...
International audienceUltraviolet GaN photodetectors based on nanowires (NWs) fabricated by top-down...
This paper presents an investigation of photoelectric properties of the CVD-grown multi-prong GaN na...
\u3cp\u3eSeveral of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes c...
International audienceIn this work, we compare the photodetector performance of single nearly defect...
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowire...
International audienceWe demonstrate single-nanowire photodetectors based on nanowires containing Ga...
arXiv:1604.07978v2We have characterized the photodetection capabilities of single GaN nanowires inco...
International audienceWe report a systematic study of the luminescence properties of AlxGa1-xN/GaN s...
International audienceWe report on the fabrication and characterization of single nitride nanowire v...
International audienceWe present a study of GaN single-nanowire ultraviolet photodetectors with an e...
Semiconductor nanowires are nanostructures with lengths up to few microns and small cross sections (...
International audienceThe interest in nanowire photodetectors stems from their unique properties, su...
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 perio...
International audienceThe electronic properties of GaN nanowires containing AlN/GaN multiple quantum...
International audienceAbstract Molecular beam epitaxy growth and optical properties of GaN quantum d...
International audienceUltraviolet GaN photodetectors based on nanowires (NWs) fabricated by top-down...
This paper presents an investigation of photoelectric properties of the CVD-grown multi-prong GaN na...
\u3cp\u3eSeveral of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes c...
International audienceIn this work, we compare the photodetector performance of single nearly defect...
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowire...