Add to ORKGThis technical report elaborates on the methodology and findings presented in “Sleepy Stack Reduction of Leakage Power” by J.C. Park, V. J. Mooney III and P. Pfeiffenberger [1]. The scope of this report includes test procedures and data on delay, dynamic and static power for all considered approaches and implementations as well as schematics and layouts for all considered approaches and implementations
As the threshold voltage is reduced due to voltage scaling in CMOS technology, it leads to increase ...
Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...
For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has become a...
Abstract—For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has...
New low power solutions for Very Large Scale Integration (VLSI) are proposed. Especially, we focus o...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our ...
A very popular approach for leakage power reduction is today represented by the adoption of emerging...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects tha...
Static power consumption is a major concern in nanometre technologies. Along with technology scaling...
The integrated circuit design has important role of various parameters are considering for design th...
This paper deals with proposal of a new dual stack approach for reducing both leakage and dynamic po...
Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used ...
As the threshold voltage is reduced due to voltage scaling in CMOS technology, it leads to increase ...
Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...
For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has become a...
Abstract—For the most recent CMOS feature sizes (e.g., 90nm and 65nm), leakage power dissipation has...
New low power solutions for Very Large Scale Integration (VLSI) are proposed. Especially, we focus o...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our ...
A very popular approach for leakage power reduction is today represented by the adoption of emerging...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects tha...
Static power consumption is a major concern in nanometre technologies. Along with technology scaling...
The integrated circuit design has important role of various parameters are considering for design th...
This paper deals with proposal of a new dual stack approach for reducing both leakage and dynamic po...
Complementary metal-oxide semiconductors (CMOS), stack, sleep and sleepy keeper techniques are used ...
As the threshold voltage is reduced due to voltage scaling in CMOS technology, it leads to increase ...
Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...