International audienceA study of the reactive sputtering of aluminum was carried out by coupling energy flux measurements at the substrate location with conventional diagnostics of the gas phase and analyses of the deposited films. The main purpose was to get some insight into the elementary mechanisms involved at the substrate surface during the film growth in the well known metal and oxide regimes and at the transitions from one to another. Measurements were carried out in front of a 10 cmAl target at a power of 400W (i.e. 5 W/cm2) and a total pressure of 0.6 Pa. The flow rate ratio (O2/O2+Ar) was varied in the range 0 to 50 %. Different kinetics and values of energy transfer, denoting different involved mechanisms, were evidenced at meta...
Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this stu...
The integral energy influx during sputtering of thin aluminium films onto silicon wafers as well as ...
The integral energy influx during sputtering of thin aluminium films onto silicon wafers as well as ...
International audiencen this work, AlNxOy thin films were deposited by reactive magnetron sputtering...
In this work, AlNxOy thin films were deposited by reactive magnetron sputtering, using an aluminum t...
The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been s...
The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been s...
The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in...
The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O2 gas mixtures was...
The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a...
The effect of plasma activation of reactive gas on the process of reactive magnetron synthesis of ox...
The effect of plasma activation of reactive gas on the process of reactive magnetron synthesis of ox...
The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a...
The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a...
Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this stu...
Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this stu...
The integral energy influx during sputtering of thin aluminium films onto silicon wafers as well as ...
The integral energy influx during sputtering of thin aluminium films onto silicon wafers as well as ...
International audiencen this work, AlNxOy thin films were deposited by reactive magnetron sputtering...
In this work, AlNxOy thin films were deposited by reactive magnetron sputtering, using an aluminum t...
The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been s...
The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been s...
The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in...
The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O2 gas mixtures was...
The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a...
The effect of plasma activation of reactive gas on the process of reactive magnetron synthesis of ox...
The effect of plasma activation of reactive gas on the process of reactive magnetron synthesis of ox...
The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a...
The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a...
Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this stu...
Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this stu...
The integral energy influx during sputtering of thin aluminium films onto silicon wafers as well as ...
The integral energy influx during sputtering of thin aluminium films onto silicon wafers as well as ...