3D Simulation and Doping Profile Measurements of Planar Pixel Sensors

Innovative edgeless planar pixel sensors for the High Luminosity LHC upgrade are under production. Through 3D TCAD simulation of the production process and electric field at the inside of the detector, combined with SiMS measurements, a calibration and complete insight of the new structures is achieved. Comparison between simulated data and experimental measurements allow a calibration of the process and a better understanding of the production. In addition, innovative bias grid geometries in classical planar pixel structures are studied a 3D approach while the question of efficiency drop in the region of the bias grid is addressed