Neutron-induced single events in a cots soft-errir free SRAM at low bias voltage
- Clemente, J.A.
- FRANCO, F.J.
- Villa, Francesca
- Baylac, Maud
- Ramos Vargas, Pablo Francisco
- Vargas Vallejo, Vanessa Carolina
- MECHA, H.
- AGAPITO, J.A.
- Velazco, Raoul
Publication date
September 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP15449-CDR (CD-ROM) ISBN: 978-1-5090-0230-6 (CD-ROM) IEEE Catalog Number: CFP15449-PRT (PRINT) ISBN: 978-1-5090-0231-3 (PRINT)International audienceThis paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed
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