IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP15449-CDR (CD-ROM) ISBN: 978-1-5090-0230-6 (CD-ROM) IEEE Catalog Number: CFP15449-PRT (PRINT) ISBN: 978-1-5090-0231-3 (PRINT)International audienceThis paper presentes an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented
Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication a...
International audienceThis paper presents the characterization of the sensitivity to 14-MeV neutrons...
During neutron irradiation of 4-Mb SRAMs, large-scale multiple cell upsets (MCUs) were observed. The...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving ra...
International audienceRecently, the occurrence of multiple events in static tests has been investiga...
Recently, the occurrence of multiple events in static tests has been investigated by checking the st...
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the de...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple...
This paper presents an analysis of the multiple events (and more specifically, Multiple Cell Upsets ...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
International audienceThis article reviews state-of-the-art techniques for the evaluation of the eff...
With the rise of the transistor in the 1970s, electronics shifted from analog circuitry, where value...
Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication a...
International audienceThis paper presents the characterization of the sensitivity to 14-MeV neutrons...
During neutron irradiation of 4-Mb SRAMs, large-scale multiple cell upsets (MCUs) were observed. The...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving ra...
International audienceRecently, the occurrence of multiple events in static tests has been investiga...
Recently, the occurrence of multiple events in static tests has been investigated by checking the st...
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the de...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple...
This paper presents an analysis of the multiple events (and more specifically, Multiple Cell Upsets ...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
International audienceThis article reviews state-of-the-art techniques for the evaluation of the eff...
With the rise of the transistor in the 1970s, electronics shifted from analog circuitry, where value...
Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication a...
International audienceThis paper presents the characterization of the sensitivity to 14-MeV neutrons...
During neutron irradiation of 4-Mb SRAMs, large-scale multiple cell upsets (MCUs) were observed. The...