Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light-hole-heavy-hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
By single-electron tunneling spectroscopy we investigate the difference in spin splitting of single-...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunn...
The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole imp...
The resonances of a resonant tunneling structure are probed by a magnetic field applied parallel to ...
International audienceWe report experimental evidence of ballistic hole transport in one-dimensional...
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-de...
The current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the prese...
We have investigated the valley splitting of two-dimensional electrons in high-quality Si Si1-x Gex ...
Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that ...
Resonant and non-resonant tunneling processes in p-type Si/Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$/Si double ...
We present calculations of hole Landau levels, cyclotron masses, and far-infrared spectra for strain...
We study the Zeeman spin splitting in a quantum point contact (QPC) etched into an InGaAs/InP hetero...
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well...
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
By single-electron tunneling spectroscopy we investigate the difference in spin splitting of single-...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...
Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunn...
The method of magnetotunneling spectroscopy has been used for experimental probing of heavy-hole imp...
The resonances of a resonant tunneling structure are probed by a magnetic field applied parallel to ...
International audienceWe report experimental evidence of ballistic hole transport in one-dimensional...
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-de...
The current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the prese...
We have investigated the valley splitting of two-dimensional electrons in high-quality Si Si1-x Gex ...
Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that ...
Resonant and non-resonant tunneling processes in p-type Si/Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$/Si double ...
We present calculations of hole Landau levels, cyclotron masses, and far-infrared spectra for strain...
We study the Zeeman spin splitting in a quantum point contact (QPC) etched into an InGaAs/InP hetero...
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well...
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
By single-electron tunneling spectroscopy we investigate the difference in spin splitting of single-...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...