We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs (001) surfaces. From these data the linear and quadratic electro-optic coefficient spectra are determined in the important 2.8-3.4 eV spectral region. The surface strain and fields induced by the surface reconstruction are also determined. We show experimentally that between c(4x4) and (2x4) surfaces, there is an inversion of the surface electric field which we attribute to a direct piezo-electric effect related to the surface strain induced by reconstruction
A method for the calculation of the surface local-field effect on reflectance has been developed. It...
High-Resolution Electron-Energy-Loss Spectroscopy (HREELS) has been applied to investigate the aniso...
Reflectance anisotropy spectroscopy (RAS) is applied to study the reconstructed GaAsBi(001) surfaces...
Three optical spectroscopic techniques commonly used for the measurement of the surface electric fie...
By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) sur...
We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001)...
We have performed ab initio pseudopotential calculations of three alternative structures of the GaAs...
The inverse piezoelectric effect, in which the strains were electrically induced, in a single crysta...
The strong in-plane optical anisotropy of (001) semi-insulating GaAs, which comes from the submicron...
The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by...
Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the el...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
Electronic structure of semiconductor interface is very interesting. However, conventional surface d...
The optical anisotropy of differently reconstructed GaAs(001) surfaces has been analysed both theore...
A method for the calculation of the surface local-field effect on reflectance has been developed. It...
High-Resolution Electron-Energy-Loss Spectroscopy (HREELS) has been applied to investigate the aniso...
Reflectance anisotropy spectroscopy (RAS) is applied to study the reconstructed GaAsBi(001) surfaces...
Three optical spectroscopic techniques commonly used for the measurement of the surface electric fie...
By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) sur...
We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001)...
We have performed ab initio pseudopotential calculations of three alternative structures of the GaAs...
The inverse piezoelectric effect, in which the strains were electrically induced, in a single crysta...
The strong in-plane optical anisotropy of (001) semi-insulating GaAs, which comes from the submicron...
The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by...
Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the el...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
Electronic structure of semiconductor interface is very interesting. However, conventional surface d...
The optical anisotropy of differently reconstructed GaAs(001) surfaces has been analysed both theore...
A method for the calculation of the surface local-field effect on reflectance has been developed. It...
High-Resolution Electron-Energy-Loss Spectroscopy (HREELS) has been applied to investigate the aniso...
Reflectance anisotropy spectroscopy (RAS) is applied to study the reconstructed GaAsBi(001) surfaces...