In this paper, we study the error performance of programming architectures for Flash memories. Specifically, we propose an advanced programming architecture and evaluate its performance via computer simulations. We show that the proposed method can improve the error performance under severe interfering effects, which is the case for the next-generation Flash memories with very small cells employing multiple levels
Initially used in digital audio players, digital cameras, mobile phones, and USB memory sticks, flas...
This dissertation proposes mathematical algorithms for improving Flash-based storage system's four k...
Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to...
NAND Flash memories have become a widely used non-volatile data storage technology and their applica...
Abstract—In this work, we use an extensive empirical database of errors induced by write, read, and ...
This paper presents a method to reduce area overhead and timing impact due to the implementation of ...
We present a novel data programming scheme for flash memory. In each word-line, exactly k out of n m...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
The increasing demands for high density and low cost non-volatile storage media are driving the tech...
As NAND flash memory continues to scale down to smaller process technology nodes, its reliability an...
The use of Flash memories in portable embedded systems is ever increasing. This is because of the mu...
Multi-level flash memory cells represent data by the amount of charge stored in them. Certain voltag...
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) ...
Abstract—Flash memories have become a significant storage technology. However, they have various typ...
Program disturb, read disturb, and retention time noise are identified as three major contributors t...
Initially used in digital audio players, digital cameras, mobile phones, and USB memory sticks, flas...
This dissertation proposes mathematical algorithms for improving Flash-based storage system's four k...
Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to...
NAND Flash memories have become a widely used non-volatile data storage technology and their applica...
Abstract—In this work, we use an extensive empirical database of errors induced by write, read, and ...
This paper presents a method to reduce area overhead and timing impact due to the implementation of ...
We present a novel data programming scheme for flash memory. In each word-line, exactly k out of n m...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
The increasing demands for high density and low cost non-volatile storage media are driving the tech...
As NAND flash memory continues to scale down to smaller process technology nodes, its reliability an...
The use of Flash memories in portable embedded systems is ever increasing. This is because of the mu...
Multi-level flash memory cells represent data by the amount of charge stored in them. Certain voltag...
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) ...
Abstract—Flash memories have become a significant storage technology. However, they have various typ...
Program disturb, read disturb, and retention time noise are identified as three major contributors t...
Initially used in digital audio players, digital cameras, mobile phones, and USB memory sticks, flas...
This dissertation proposes mathematical algorithms for improving Flash-based storage system's four k...
Flash memories are non-volatile memory devices. The rapid development of flash technologies leads to...