A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency

Boers, Michael
Parker, Anthony
Weste, Neil

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Publication date

January 2008

DOI

10.1109/MMM.2008.915338

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Journal

IEEE Microwave Magazine

Abstract

This article presents the winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power-added efficiency (PAE) greater than 85%. It will be shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rules can produce first-pass power amplifier design success. An overview of design, fabrication, and testing processes is presented here together with measured results.5 page(s

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A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency

Abstract

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A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency

Abstract

Extracted data

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