The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating models. It is shown that the study of the trap and self-heating dynamics requires a proper correction technique that accounts for the change in trap-potential, trap time-constant and thermal response due to the non-ideal response of the pulse-amplifier. Several post-measurement data correction techniques are discussed and shown to be incapable of predicting the true drain-current transient. A pre-measurement terminal correction technique using a new version of the pulse measurement system is used to solve the problem.7 page(s
International audienceGaN High Electron Mobility Transistors (HEMTs) is very promising for high powe...
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In this paper, the effects of device self-heating on the extraction of traps activation energy are i...
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This paper critically investigates the advantages and limitations of the current-transient methods u...
International audienceTime-domain pulsed I-V measurements dedicated to characterising and modelling ...
International audienceGaN High Electron Mobility Transistors (HEMTs) are very promising for high pow...
International audienceGaN High Electron Mobility Transistors (HEMTs) is very promising for high powe...
Abstract This paper presents new microwave charac-terization techniques to (1) estimate the interna...
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the smal...
A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse me...
In this paper results obtained by drain current transients measurement on GaN-based high electron mo...
In this paper, the effects of device self-heating on the extraction of traps activation energy are i...
Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwav...
In this paper, the effects of device self-heating on the extraction of traps activation energy are i...
International audienceIn this paper, a new characterization method, which allows the determination o...
This paper critically investigates the advantages and limitations of the current-transient methods u...
International audienceThis paper reports on new techniques of on-wafer time-domain measurements ap...
This paper critically investigates the advantages and limitations of the current-transient methods u...
International audienceTime-domain pulsed I-V measurements dedicated to characterising and modelling ...
International audienceGaN High Electron Mobility Transistors (HEMTs) are very promising for high pow...
International audienceGaN High Electron Mobility Transistors (HEMTs) is very promising for high powe...
Abstract This paper presents new microwave charac-terization techniques to (1) estimate the interna...
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the smal...