AlGaN/GaN HEMT nonlinear model fitting including a trap model
- Tarazi, Jabra
- Schwitter, Bryan K
- Parker, Anthony E
- Mahon, Simon J
Publication date
January 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap model is then used in the extraction of a nonlinear device model. The resulting model accurately relates dc I-V with nonlinear behaviour which is crucial for accurately predicting the load-pull measurements. This modeling procedure can be integrated into a modelling/design flow enabling accurate prediction of device and circuit performance.4 page(s
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