Add to ORKGSiC epitaxial growth using the Chemical Vapour Deposition (CVD) technique on nominally on-axis substrate is presented. Both standard and chloride-based chemistry have been used with the aim to obtain high quality layers suitable for device fabrication. Both homoepitaxy (4H on 4H) and heteroepitaxy (3C on hexag onal substrate) are addressed
A high growth rate (>10mm/h) Chemical Vapour Deposition (CVD) process is investigated in a vertic...
The growth rate of a 4H-SiC epitaxial layer has been increased by a factor of 19 (up to 112 lm h–1) ...
International audienceThis work presents the successful CVD heteroepitaxial growth of 3C-SiC on diam...
Abstract. A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to gro...
A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study ...
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon ...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
Abstract. A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor ...
A comprehensive study on the step-controlled homoepitaxial growth on the (0001)Si-face of vicinal 4H...
This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizont...
By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon ...
Homoepitaxial growth has been performed on Si-face nominally on-axis 4H–SiC substrates using horizon...
Abstract. To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si sur...
The growth of 4H-SiC epilayers on 1.28 degrees off-cut substrates is reported in this study and comp...
Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different...
A high growth rate (>10mm/h) Chemical Vapour Deposition (CVD) process is investigated in a vertic...
The growth rate of a 4H-SiC epitaxial layer has been increased by a factor of 19 (up to 112 lm h–1) ...
International audienceThis work presents the successful CVD heteroepitaxial growth of 3C-SiC on diam...
Abstract. A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to gro...
A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study ...
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon ...
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for elect...
Abstract. A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor ...
A comprehensive study on the step-controlled homoepitaxial growth on the (0001)Si-face of vicinal 4H...
This dissertation research focused on the growth of 4H-SiC epitaxial layers in low-pressure horizont...
By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon ...
Homoepitaxial growth has been performed on Si-face nominally on-axis 4H–SiC substrates using horizon...
Abstract. To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si sur...
The growth of 4H-SiC epilayers on 1.28 degrees off-cut substrates is reported in this study and comp...
Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different...
A high growth rate (>10mm/h) Chemical Vapour Deposition (CVD) process is investigated in a vertic...
The growth rate of a 4H-SiC epitaxial layer has been increased by a factor of 19 (up to 112 lm h–1) ...
International audienceThis work presents the successful CVD heteroepitaxial growth of 3C-SiC on diam...