9 págs.; 6 figs.© 2015 American Chemical Society.We fabricate an Er3+/nano-Si ultrathin (≈ 4 nm) layer and explore its optical response from the near-UV to the near-IR, in the linear and nonlinear regimes. This nanohybrid layer combines the tunable broad-band light harvesting properties of nano-Si with the robust and sharp Er3+ light emission. Its unique nanostructure enables efficient nanometer-range transfer of the harvested energy to the Er3+ ions. Therefore, clear 1.54 μm Er3+ photoluminescence (PL) is observed under excitation at any photon energy (Eexc) from the visible to the near-UV, despite the small amount of Er3+ ions in the layer (<2.5% of atomic monolayer). In the linear regime, the Er3+ PL intensity can be tuned to a maximum b...
Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices....
Electrically pumped Si light source at the standard telecommunication wavelength (1535 nm) can be ma...
A structured film formed by an active Er3+-doped amorphous Al2O3 layer located between two amorphous...
We fabricate an Er<sup>3+</sup>/nano-Si ultrathin (≈ 4 nm) layer and explore its optical response fr...
Lille Grand Palais, May 11-15, 2015Resume : Advanced integrated photonic devices will include active...
San Francisco, California, April 6-10, 2015; http://www.mrs.org/spring2015/The next generation of in...
We have investigated the percentage of Er3+ ions which contribute to the low temperature 1.5-mu m ph...
We have investigated the role of the Si excess on the photoluminescence properties of Er doped subst...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation mo...
EMN Istanbul Meeting 2015, Istanbul, Turkey, July 1-4 2015The next generation of integrated photonic...
Photon upconversion upon 1550 nm excitation is of high relevance for applications in the third biolo...
International audienceThe present article deals with the use of Si nanoclusters as efficient sensiti...
The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has bee...
Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices....
Electrically pumped Si light source at the standard telecommunication wavelength (1535 nm) can be ma...
A structured film formed by an active Er3+-doped amorphous Al2O3 layer located between two amorphous...
We fabricate an Er<sup>3+</sup>/nano-Si ultrathin (≈ 4 nm) layer and explore its optical response fr...
Lille Grand Palais, May 11-15, 2015Resume : Advanced integrated photonic devices will include active...
San Francisco, California, April 6-10, 2015; http://www.mrs.org/spring2015/The next generation of in...
We have investigated the percentage of Er3+ ions which contribute to the low temperature 1.5-mu m ph...
We have investigated the role of the Si excess on the photoluminescence properties of Er doped subst...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
In this work, we present some approaches recently developed for enhancing light emission from Er-bas...
Among Er-doped crystalline Si materials, Si/Si:Er multi-nanolayer structures grown by sublimation mo...
EMN Istanbul Meeting 2015, Istanbul, Turkey, July 1-4 2015The next generation of integrated photonic...
Photon upconversion upon 1550 nm excitation is of high relevance for applications in the third biolo...
International audienceThe present article deals with the use of Si nanoclusters as efficient sensiti...
The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has bee...
Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices....
Electrically pumped Si light source at the standard telecommunication wavelength (1535 nm) can be ma...
A structured film formed by an active Er3+-doped amorphous Al2O3 layer located between two amorphous...