© 2014 Elsevier Ltd. All rights reserved. Aluminum nitride films (AlN) were produced by Nd:YAG pulsed laser (PLD), with repetition rate of 10 Hz. The laser interaction on Al target under nitrogen gas atmosphere generates plasma which is produced at room temperature with variation in the pressure work from 0.39 Pa to 1.5 Pa thus producing different AlN films. In this sense the dependency of optical properties with the pressure of deposition was studied. The plasma generated at different pressures was characterized by optical emission spectroscopy (OES). Additionally ionic and atomic species from the emission spectra obtained were observed. The plume electronic temperature has been determined by assuming a local thermodynamic equilibrium of t...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
In this work, we explored the influence of the low growth temperatures on the structural and optical...
Aluminum nitride (AlN) thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed ...
Aluminum nitride (AlN) films were synthesized onto Si(100) substrates by pulsed laser deposition (PL...
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We ...
Crystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer depositi...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The ...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, ...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
The mechanical and compositional properties of plasma-enhanced atomic layer deposition (PEALD) AlN f...
We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at ...
Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
In this work, we explored the influence of the low growth temperatures on the structural and optical...
Aluminum nitride (AlN) thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed ...
Aluminum nitride (AlN) films were synthesized onto Si(100) substrates by pulsed laser deposition (PL...
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We ...
Crystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer depositi...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The ...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, ...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
The mechanical and compositional properties of plasma-enhanced atomic layer deposition (PEALD) AlN f...
We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at ...
Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
In this work, we explored the influence of the low growth temperatures on the structural and optical...