Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructured GaAs/AlGaAs/GaAs core/inner shell/outer shell nanowires. It was found that impurity random potential results in a red shift of the recombination time maximum with respect to the photoluminescence peak energy
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructu...
Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructu...
The dynamics of free electron-hole pairs and excitons in GaAs-AlGaAs-GaAs core-shell-skin nanowires ...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
An overview of recent experimental and theoretical results on stationary and time-dependent photolum...
An overview of recent experimental and theoretical results on stationary and time-dependent photolum...
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructu...
Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructu...
The dynamics of free electron-hole pairs and excitons in GaAs-AlGaAs-GaAs core-shell-skin nanowires ...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
An overview of recent experimental and theoretical results on stationary and time-dependent photolum...
An overview of recent experimental and theoretical results on stationary and time-dependent photolum...
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoe...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantu...