This work reports the investigation on the structural differences between InAs quantum rings and their precursor quantum dots species as well as on the presence of piezoelectric fields and asymmetries in these nanostructures. The experimental results show significant reduction in the ring dimensions when the sizes of capped and uncapped ring and dot samples are compared. The iso-lattice parameter mapped by grazing-incidence x-ray diffraction has revealed the lateral extent of strained regions in the buried rings. A comparison between strain and composition of dot and ring structures allows inferring on how the ring formation and its final configuration may affect optical response parameters. Based on the experimental observations, a discuss...
The strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QD) sensitively depend on...
We have calculated the electronic structure of InAs quantum dots embedded in InP as a function of si...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
We use a plane-wave technique to study the electron and hole wave functions in self-assembled InGaAs...
We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum ri...
The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum ri...
In the framework of effective mass envelope function theory, the electronic states of the InAs/GaAs ...
The electronic structures of self-assembled InAs1−xNx/GaAs nanostructures from quantum lens to quant...
The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical...
The strain fields in and around self-organized In(Ga)As∕GaAs quantum dots (QDs) sensitively depend o...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
[[abstract]]© 2007 Elsevier - The influence of InAs coverage on the formation of self-assembled quan...
Advances in nanofabrication techniques have opened a plethora of opportunities to exploit the electr...
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentall...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
The strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QD) sensitively depend on...
We have calculated the electronic structure of InAs quantum dots embedded in InP as a function of si...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
We use a plane-wave technique to study the electron and hole wave functions in self-assembled InGaAs...
We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum ri...
The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum ri...
In the framework of effective mass envelope function theory, the electronic states of the InAs/GaAs ...
The electronic structures of self-assembled InAs1−xNx/GaAs nanostructures from quantum lens to quant...
The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical...
The strain fields in and around self-organized In(Ga)As∕GaAs quantum dots (QDs) sensitively depend o...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
[[abstract]]© 2007 Elsevier - The influence of InAs coverage on the formation of self-assembled quan...
Advances in nanofabrication techniques have opened a plethora of opportunities to exploit the electr...
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentall...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
The strain fields in and around self-organized In(Ga)As/GaAs quantum dots (QD) sensitively depend on...
We have calculated the electronic structure of InAs quantum dots embedded in InP as a function of si...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...