Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO(2) interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright (C) 2011 John Wiley & Sons, Ltd
We show that there is no correlation between the blue shift of the visible photoluminescence band an...
An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs...
Abstract Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrate...
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with t...
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with t...
International audienceThe phonon confinement model is often used to analyze Raman scattering band sh...
Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer ...
AbstractPhoto-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructu...
Raman light scattering with excitation of electron-hole continuum and a phonon is investigated theor...
Abstract. Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystall...
Throughout the 50-1050 cm 1 range, in addition to the first order Raman peak of optical phonon, a we...
It is shown that local-field effects in simple metals and semiconductors couple the plasmon into the...
Defect rich regions in multicrystalline silicon are by Raman spectroscopy at high and low injection ...
Size-dependent asymmetric low-frequency Raman line shapes have been observed from silicon (Si) nanos...
Previously it has been shown that the correlation between shifts in luminescence and Raman peak posi...
We show that there is no correlation between the blue shift of the visible photoluminescence band an...
An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs...
Abstract Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrate...
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with t...
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with t...
International audienceThe phonon confinement model is often used to analyze Raman scattering band sh...
Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer ...
AbstractPhoto-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructu...
Raman light scattering with excitation of electron-hole continuum and a phonon is investigated theor...
Abstract. Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystall...
Throughout the 50-1050 cm 1 range, in addition to the first order Raman peak of optical phonon, a we...
It is shown that local-field effects in simple metals and semiconductors couple the plasmon into the...
Defect rich regions in multicrystalline silicon are by Raman spectroscopy at high and low injection ...
Size-dependent asymmetric low-frequency Raman line shapes have been observed from silicon (Si) nanos...
Previously it has been shown that the correlation between shifts in luminescence and Raman peak posi...
We show that there is no correlation between the blue shift of the visible photoluminescence band an...
An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs...
Abstract Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrate...