The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based techniques. The shape, average diameter and size dispersion were obtained from grazing-incidence small-angle X-ray scattering data. X-ray diffraction measurements were used to obtain crystallite sizes and composition via resonant (anomalous) measurements. By using these techniques as input for extended X-ray absorption fine structure analysis, the local composition surrounding the Ge atoms is investigated. Although the results for each of the methods above are commonly analyzed separately, the combination of such techniques leads to an improved understanding of nanoparticle structural and chemical properties. Crucial indirect parameters that cannot be...
A simple and reliable e-gun assisted physical vapor deposition technique was used to deposit alterna...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Semiconductor nanocrystals are expected to play an important role in the development of new generati...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Orientadores: Gustavo de Medeiros Azevedo, Ângelo Malachias de Souza, Eduardo Granado Monteiro da Si...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
A discussion of the limitations of Raman scattering as applied to Ge/Si nanostructures is followed b...
We have investigated the structural properties of Si1−xGex nanocrystals formed in an amorphous SiO2 ...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
We have investigated the structural properties of Si1 − xGex nanocrystals formed in an amorphous SiO...
International audienceWe have prepared germanium nanoparticles embedded in SiO2 matrix by atom beam ...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion...
A simple and reliable e-gun assisted physical vapor deposition technique was used to deposit alterna...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Semiconductor nanocrystals are expected to play an important role in the development of new generati...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Orientadores: Gustavo de Medeiros Azevedo, Ângelo Malachias de Souza, Eduardo Granado Monteiro da Si...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
A discussion of the limitations of Raman scattering as applied to Ge/Si nanostructures is followed b...
We have investigated the structural properties of Si1−xGex nanocrystals formed in an amorphous SiO2 ...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
We have investigated the structural properties of Si1 − xGex nanocrystals formed in an amorphous SiO...
International audienceWe have prepared germanium nanoparticles embedded in SiO2 matrix by atom beam ...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion...
A simple and reliable e-gun assisted physical vapor deposition technique was used to deposit alterna...
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique...
Semiconductor nanocrystals are expected to play an important role in the development of new generati...