Add to ORKGTexto completo. Acesso restrito. p. 1 - 3The impurity density of states due to interacting donor-pairs are calculated for a random distribution of phosphorus in the many-valley silicon semiconductor, at densities around the metal-nonmetal transition. The results indicate that the donor-pairs play a relevant role in the optical absorption measurements of degenerate silicon
For a monovalent donor impurity in a semiconductor, the number of electrons that can be bound to an ...
A variational procedure in the effective-mass approximation was used in the study of both the densit...
International audienceThe intrinsic lifetime of the 2p(0) shallow impurity state in silicon doped wi...
p. 1 - 3The density of states in n-doped Si in the intermediate impurity concentration range has bee...
Detailed measurements and theoretical analysis are presented of the far-infrared absorption coeffici...
An investigation has been made into the possibility of observing optical transitions (in the 100-mic...
Texto completo: acesso restrito. p. 1466–1471The cluster-like impurity effect in semiconductor mater...
The e.p.r. spectrum for relatively dilute samples of phosphorus-doped silicon (<5 x 10(16) donors/cm...
The pseudopotential theory of a substitutional impurity in a semiconductor is formulated using the o...
In uncompensated phosphorus or arsenic-doped silicon, observation of the shallow, donor absorption l...
A simple model for absorption of infrared radiation by impurity atoms in silicon crystals has been d...
The eigenvalue problem for the two-electron system of a donor pair in germanium and silicon was solv...
Karaiskaj et al. [1] showed that the isotopic randomness present in natural Si (natSi) causes a sign...
A theory of the variation of conduction electron density with the temperature for various impurity c...
The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass ...
For a monovalent donor impurity in a semiconductor, the number of electrons that can be bound to an ...
A variational procedure in the effective-mass approximation was used in the study of both the densit...
International audienceThe intrinsic lifetime of the 2p(0) shallow impurity state in silicon doped wi...
p. 1 - 3The density of states in n-doped Si in the intermediate impurity concentration range has bee...
Detailed measurements and theoretical analysis are presented of the far-infrared absorption coeffici...
An investigation has been made into the possibility of observing optical transitions (in the 100-mic...
Texto completo: acesso restrito. p. 1466–1471The cluster-like impurity effect in semiconductor mater...
The e.p.r. spectrum for relatively dilute samples of phosphorus-doped silicon (<5 x 10(16) donors/cm...
The pseudopotential theory of a substitutional impurity in a semiconductor is formulated using the o...
In uncompensated phosphorus or arsenic-doped silicon, observation of the shallow, donor absorption l...
A simple model for absorption of infrared radiation by impurity atoms in silicon crystals has been d...
The eigenvalue problem for the two-electron system of a donor pair in germanium and silicon was solv...
Karaiskaj et al. [1] showed that the isotopic randomness present in natural Si (natSi) causes a sign...
A theory of the variation of conduction electron density with the temperature for various impurity c...
The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass ...
For a monovalent donor impurity in a semiconductor, the number of electrons that can be bound to an ...
A variational procedure in the effective-mass approximation was used in the study of both the densit...
International audienceThe intrinsic lifetime of the 2p(0) shallow impurity state in silicon doped wi...