Add to ORKGThe objective of this master thesis was to provide the optimization of an ion-atom beam source for the improvement of its properties. The improvement of the parameters increases the efficiency of the source during the deposition of gallium nitride ultrathin films (GaN) being important in microeletronics and optoelectronics. After optimization, the depositions of GaN ultrathin films on Si(111) 7x7 at lower temperatures
High-quality dielectric films could enable GaN normally off high-electron-mobility transistors (HEMT...
This work presents the selective growth of three-dimensional metallic gallium nitride structures on ...
This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers o...
This text is oriented for problems of creating ion beams. Thesis also describe the impact of ion opt...
In the thesis the development of two equipment for preparation of ultrathin films under ultrahign va...
This bachelor´s thesis deals with modification and experimental application of the ion device, gener...
This thesis is focused on construction and optimization of radiofrequency atomic dissociation source...
This bachelor thesis deals with the automation of sources for the deposition of GaN nanocrystals use...
This bachelor´s thesis deals with design, testing and calibration of an effussion cell generating si...
The thesis is focused on the study of growth of 2D GaN nanocrystals on Si(111) 7x7. In the theoretic...
Focused gallium (Ga) ion beam technology has been proposed to modify the surface of GaN thin films. ...
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach ...
For the advance of GaN based optoelectronic devices, one of the major barriers has been the high def...
The assistance of thin film deposition with low-energy ion bombardment influences their final proper...
118 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.This thesis work presents a c...
High-quality dielectric films could enable GaN normally off high-electron-mobility transistors (HEMT...
This work presents the selective growth of three-dimensional metallic gallium nitride structures on ...
This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers o...
This text is oriented for problems of creating ion beams. Thesis also describe the impact of ion opt...
In the thesis the development of two equipment for preparation of ultrathin films under ultrahign va...
This bachelor´s thesis deals with modification and experimental application of the ion device, gener...
This thesis is focused on construction and optimization of radiofrequency atomic dissociation source...
This bachelor thesis deals with the automation of sources for the deposition of GaN nanocrystals use...
This bachelor´s thesis deals with design, testing and calibration of an effussion cell generating si...
The thesis is focused on the study of growth of 2D GaN nanocrystals on Si(111) 7x7. In the theoretic...
Focused gallium (Ga) ion beam technology has been proposed to modify the surface of GaN thin films. ...
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach ...
For the advance of GaN based optoelectronic devices, one of the major barriers has been the high def...
The assistance of thin film deposition with low-energy ion bombardment influences their final proper...
118 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.This thesis work presents a c...
High-quality dielectric films could enable GaN normally off high-electron-mobility transistors (HEMT...
This work presents the selective growth of three-dimensional metallic gallium nitride structures on ...
This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers o...