Preparation and characterization of MoS2 thin films

This thesis deals with topological insulators, which are described by the quantum spin Hall effect, as well as on semiconductors, where the band structure of semiconductors and more specifically mentioned unipolar transistor MOSFET is explained. There are also mentioned primarily 2D materials and in particular of MoS2. Topic focuses on its structure, the electric properties, the use and preparation by using micromechanical exfoliation. In the last chapter it is described how to prepare MoS2 structures and their analysis. Structural properties of this material were measured by the AFM and Raman spectroscopy. The experimental part there are illustrative photograph of MoS2 taken with an optical microscope and spatial structures created by AFM