The thesis briefly describes the principles and types of luminescence. In the first following research of study is also discussed the equipment which is applicable to photoluminescence experiments, including the arrangement. The second research focuses on the influence of the properties of gallium nitride (GaN) (ultra) thin films and other structures prepared by various ways on shape of photoluminescence spectra. The paperwork also describes the further optimization of photoluminescent apparatus used for the measurement of photoluminescence spectrum in the UV light radiation which is located at the Institute of Physical Engineering at the Technical University. The extension of measurements at low temperatures (design and construction of its...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
Photoluminescence analysis has been implemented to investigate the crystalline properties of Gallium...
In this thesis experimental samples of multiple quantum wells in the InGaN/GaN structures will be co...
The aim of this thesis was to investigate the properties of GaN and related compounds using photolum...
The first part of bachelor’s thesis deals with theory of photoluminescence in semiconductors, the se...
AbstractEfficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 110...
Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are ...
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materia...
Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT...
This thesis consists of three different parts. In the first part it gives the reader an overview of ...
Gallium Nitride materials are direct bandgap semiconductors with important applications, such as in ...
Photoluminescence excitation (PLE) spectra were measured for the light emissions of 370nm, 590nm and...
The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to u...
Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02...
A low-temperature photoluminescence (PL) study was conducted on low-temperature metal modulation epi...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
Photoluminescence analysis has been implemented to investigate the crystalline properties of Gallium...
In this thesis experimental samples of multiple quantum wells in the InGaN/GaN structures will be co...
The aim of this thesis was to investigate the properties of GaN and related compounds using photolum...
The first part of bachelor’s thesis deals with theory of photoluminescence in semiconductors, the se...
AbstractEfficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 110...
Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are ...
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materia...
Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT...
This thesis consists of three different parts. In the first part it gives the reader an overview of ...
Gallium Nitride materials are direct bandgap semiconductors with important applications, such as in ...
Photoluminescence excitation (PLE) spectra were measured for the light emissions of 370nm, 590nm and...
The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to u...
Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02...
A low-temperature photoluminescence (PL) study was conducted on low-temperature metal modulation epi...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
Photoluminescence analysis has been implemented to investigate the crystalline properties of Gallium...
In this thesis experimental samples of multiple quantum wells in the InGaN/GaN structures will be co...