A new method of determination of diffusion profiles in fast, not destructive and contactless (with help of infra-red reflexion) way was designed, theoretically analysed, realized either in computational and in experimental field and finally successfully tested
This paper compares boron profiles measured by spreading resistance and SIMS techniques. The boron s...
We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffu...
It has been reported earlier that in the case of boron diffusion into silicon, the value of sheet re...
A new method of determination of diffusion profiles in fast, not destructive and contactless (with h...
Abstract approved Redacted for Privacy (Major professor).. A technique was investigated in which a s...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impur...
A method for determining the carrier concentration profile and the depth of p-n junction boron diffu...
This paper describes the "pairing - dissociation" behaviour of metal-acceptor pairs and proposes a m...
A novel method for measurement of the adatom density of segregating dopant atoms is suggested. The d...
The oxidation of silicon and the diffusion of boron into siliconhave been investigated together with...
In order to calculate the redistribution of boron in silicon by both diffusion and autodoping during...
The analytical potential of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (p...
The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam ep...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
This paper compares boron profiles measured by spreading resistance and SIMS techniques. The boron s...
We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffu...
It has been reported earlier that in the case of boron diffusion into silicon, the value of sheet re...
A new method of determination of diffusion profiles in fast, not destructive and contactless (with h...
Abstract approved Redacted for Privacy (Major professor).. A technique was investigated in which a s...
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron...
The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impur...
A method for determining the carrier concentration profile and the depth of p-n junction boron diffu...
This paper describes the "pairing - dissociation" behaviour of metal-acceptor pairs and proposes a m...
A novel method for measurement of the adatom density of segregating dopant atoms is suggested. The d...
The oxidation of silicon and the diffusion of boron into siliconhave been investigated together with...
In order to calculate the redistribution of boron in silicon by both diffusion and autodoping during...
The analytical potential of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (p...
The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam ep...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
This paper compares boron profiles measured by spreading resistance and SIMS techniques. The boron s...
We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffu...
It has been reported earlier that in the case of boron diffusion into silicon, the value of sheet re...