Add to ORKGA new method of determination of diffusion profiles in fast, not destructive and contactless (with help of infra-red reflexion) way was designed, theoretically analysed, realized either in computational and in experimental field and finally successfully tested
The incorporation of phosphorus into silicon epi-taxial films grown by the hydrogen reduction of sil...
In order to increase the conversion efficiencies of silicon solar cells, advanced cell structures wi...
The Doped Oxide Solid Source (DOSS) diffusion technique is well suited for fine-tuning of the surfac...
A new method of determination of diffusion profiles in fast, not destructive and contactless (with h...
Abstract. The diffusion of Phosphorus in silicon using a POCl3 source has been considered. In the ba...
The understanding and therefore the optimization of n+-emitter formation in crystalline silicon usin...
The understanding and therefore the optimization of n+-emitter formation in crystalline silicon usin...
The diffusion of phosphorus into silicon from doped oxide layers, deposited at low temperatures, has...
The phosphorus planar diffusion source, PH-1000N, was used to test the ability of the process simula...
By the use of two- and four-point probe measurements, much can be learned about the characteristics ...
Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily dope...
A possibility to introduce phosphorus in silicon, different from direct phosphorus ion implantation,...
In this paper, contact resistance of monocrystalline silicon solar cells was optimized by the variat...
Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily dope...
The behavior of phosphorus i l ica-glass (PSG) as a silicon dopant source has been studied by measur...
The incorporation of phosphorus into silicon epi-taxial films grown by the hydrogen reduction of sil...
In order to increase the conversion efficiencies of silicon solar cells, advanced cell structures wi...
The Doped Oxide Solid Source (DOSS) diffusion technique is well suited for fine-tuning of the surfac...
A new method of determination of diffusion profiles in fast, not destructive and contactless (with h...
Abstract. The diffusion of Phosphorus in silicon using a POCl3 source has been considered. In the ba...
The understanding and therefore the optimization of n+-emitter formation in crystalline silicon usin...
The understanding and therefore the optimization of n+-emitter formation in crystalline silicon usin...
The diffusion of phosphorus into silicon from doped oxide layers, deposited at low temperatures, has...
The phosphorus planar diffusion source, PH-1000N, was used to test the ability of the process simula...
By the use of two- and four-point probe measurements, much can be learned about the characteristics ...
Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily dope...
A possibility to introduce phosphorus in silicon, different from direct phosphorus ion implantation,...
In this paper, contact resistance of monocrystalline silicon solar cells was optimized by the variat...
Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily dope...
The behavior of phosphorus i l ica-glass (PSG) as a silicon dopant source has been studied by measur...
The incorporation of phosphorus into silicon epi-taxial films grown by the hydrogen reduction of sil...
In order to increase the conversion efficiencies of silicon solar cells, advanced cell structures wi...
The Doped Oxide Solid Source (DOSS) diffusion technique is well suited for fine-tuning of the surfac...