Application of photochemical method in the synthesis of Ga2O3 X thin films co-doped with terbium and europium

Artículo de publicación ISIGa2O3 X thin films co-doped with terbium and europium have been prepared by photochemical metalorganic deposition. In this process, solutions containing Ga(III), Tb(III) and Eu(III) 2,2,6,6-tetramethyl-3,5- heptanedionate complexes were spin coated on silicon and quartz substrates. Upon irradiation, the photosensitive of the complexes precursors undergoes decomposition, leaving a gallium oxide amorphous thin film containing terbium and europium. The photo-reactivity of these films was monitored by UV vis and FT-IR spectroscopy. The obtained films were characterized by X-ray photoelectron spectroscopy and X-ray diffraction. Under UV light excitation (254 nm) the doped films (Ga2O3 XeTb) show the characteristic emissions associated to 5D4 /7FJ (J ¼ 6, 5, 4, 3) transitions of terbium ion. However, these emissions decrease with the co-doped films (Ga2O3 XeTbeEu). Analysis suggests an energy transfer process among terbium and europium ions.The authors are grateful to the financial support of National Fund for Scientific and Technological Development, Chile. (FONDECYT N 1100045)