In this work a prototype of a floating gate sensor FGDOS has been characterized with a Co-60 source and with protons. The dependency of the sensor sensitivity on the dose rate and accumulated Total Ionizing Dose (TID) are investigated. The proton test permits to measure the sensitivity of the sensor at different incoming particles energies. An analytical model of the sensor is presented in the paper and the theoretical sensitivity for the prototype of FGDOS is evaluated. Finally, the model allows to accurately measuring the charge yield for different particle types and different energies
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guid...
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS tec...
Programmable floating gate MOSFET transistors were tested with gamma radiation with doses up to appr...
The radiation environment produced by the CERN accelerator complex includes different kinds of parti...
In the context of achieving an efficient radiation monitoring system, while also aiming to increase ...
A novel MOSFET-based dosimeter that uses a floating polysilicon gate to trap radiation-generated cha...
The harsh space radiation environment affects both satellite equipment and astronauts. Although a lo...
Dosimeters based on floating gate structure exhibit a linear radiation response, whose sensitivity i...
International audienceIn this paper, the suitability of floating gate dosimeter as total ionizing do...
MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a ...
A new MOSFET dosimeter consisting of a floating gate sensor transistor and a reference transistor of...
In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sen...
The need for upgrading the Total Ionizing Dose (TID) measurement resolution of the current version o...
The response of floating gate (FG) devices to 60Co gamma -rays under switched bias conditions is stu...
This work describes the development of a new method for recording radiation exposure by using a pass...
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guid...
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS tec...
Programmable floating gate MOSFET transistors were tested with gamma radiation with doses up to appr...
The radiation environment produced by the CERN accelerator complex includes different kinds of parti...
In the context of achieving an efficient radiation monitoring system, while also aiming to increase ...
A novel MOSFET-based dosimeter that uses a floating polysilicon gate to trap radiation-generated cha...
The harsh space radiation environment affects both satellite equipment and astronauts. Although a lo...
Dosimeters based on floating gate structure exhibit a linear radiation response, whose sensitivity i...
International audienceIn this paper, the suitability of floating gate dosimeter as total ionizing do...
MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a ...
A new MOSFET dosimeter consisting of a floating gate sensor transistor and a reference transistor of...
In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sen...
The need for upgrading the Total Ionizing Dose (TID) measurement resolution of the current version o...
The response of floating gate (FG) devices to 60Co gamma -rays under switched bias conditions is stu...
This work describes the development of a new method for recording radiation exposure by using a pass...
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guid...
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS tec...
Programmable floating gate MOSFET transistors were tested with gamma radiation with doses up to appr...