We use a single event latchup (SEL) model calibrated to heavy ion (HI) and proton data below 230 MeV to extrapolate the proton cross section to larger energies and evaluate the impact of the potential cross section increase with energy on the SEL rate in different environments. We show that in the case of devices with a large LET onset for HI and a certain amount of tungsten near the sensitive volume (SV), the calculated failure rates for energetic environments based on monoenergetic test data can significantly underestimate the real value. In addition, we show through measurements using a 480 MeV beam and an inspection of the device’s architecture that the model was successful in estimating the SEL cross section and tungsten volume per cel...
The most critical failure mode of HV semiconductors exposed to radiation is Single Event Burnout (SE...
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimate...
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the...
The energy dependence of proton-induced Single Event Latchup (SEL) failures is investigated for diff...
This paper explores the relationship between monoenergetic and mixed-field Single Event Latchup (SEL...
GANIL/Applications industriellesThe effects of heavy-ion test conditions and beam energy on device r...
heavy ion beams from their 88-inch Cyclotron. The SRAM was shown to be immune to single event latchu...
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, w...
We have examined the effect on device SV geometry on the conclusions that can be drawn from proton S...
Single Event Upset (SEU) measurements were performed on the ESA SEU Monitor using mono-energetic GeV...
The aim of this work is to provide a method to calculate single event upset (SEU) cross sections by ...
We perform Monte Carlo (MC) simulations to describe heavy ion nuclear interactions in a broad energy...
Radiation encountered in space environments can be damaging to microelectronics and potentially caus...
International audienceDesigning integrated circuits in radiation environments such as the High Lumin...
We perform Monte Carlo (MC) simulations to describe heavy ion (HI) nuclear interactions in a broad e...
The most critical failure mode of HV semiconductors exposed to radiation is Single Event Burnout (SE...
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimate...
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the...
The energy dependence of proton-induced Single Event Latchup (SEL) failures is investigated for diff...
This paper explores the relationship between monoenergetic and mixed-field Single Event Latchup (SEL...
GANIL/Applications industriellesThe effects of heavy-ion test conditions and beam energy on device r...
heavy ion beams from their 88-inch Cyclotron. The SRAM was shown to be immune to single event latchu...
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, w...
We have examined the effect on device SV geometry on the conclusions that can be drawn from proton S...
Single Event Upset (SEU) measurements were performed on the ESA SEU Monitor using mono-energetic GeV...
The aim of this work is to provide a method to calculate single event upset (SEU) cross sections by ...
We perform Monte Carlo (MC) simulations to describe heavy ion nuclear interactions in a broad energy...
Radiation encountered in space environments can be damaging to microelectronics and potentially caus...
International audienceDesigning integrated circuits in radiation environments such as the High Lumin...
We perform Monte Carlo (MC) simulations to describe heavy ion (HI) nuclear interactions in a broad e...
The most critical failure mode of HV semiconductors exposed to radiation is Single Event Burnout (SE...
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimate...
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the...