This paper presents an analysis of the maximum achievable fill-factor by a pixel detector of Geiger-mode avalanche photodiodes with the Chartered 130 nm/Tezzaron 3D process. The analysis shows that fillfactors between 66% and 96% can be obtained with different array architectures and a time-gated readout circuit of minimum area. The maximum fill-factor is achieved when the two-layer vertical stack is used to overlap the non-sensitive areas of one layer with the sensitive areas of the other one. Moreover, different sensor areas are used to further increase the fill-factor. A chip containing a pixel detector of the Geigermode avalanche photodiodes and aimed to future linear colliders has been designed with the Chartered 130 nm/Tezzaron 3D pro...
International audienceIn this paper, we present a two-layered silicon sensor working in Geiger-mode ...
Following our previous work which has led us to fabricate single pixels of geiger mode avalanche pho...
An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring ...
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage ...
The high sensitivity and excellent timing accuracy of Geiger mode avalanche photodiodes makes them i...
The need to move forward in the knowledge of the subatomic world has stimulated the development of n...
In this paper, we present the implementation and preliminary evaluation of a new type of silicon sen...
The main purpose of this work is to investigate the characteristics of a 180nm CMOS technology with ...
The next generation of particle colliders will be characterized by linear lepton colliders, where th...
This work presents low noise readout circuits for silicon pixel detectors based on Geiger mode avala...
This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imagi...
We report on the development of 32 x 32 focal plane arrays (FPAs) based on InGaAsP/InP Geiger-mode a...
International audienceIn this paper, we present a two-layered silicon sensor working in Geiger-mode ...
Following our previous work which has led us to fabricate single pixels of geiger mode avalanche pho...
An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring ...
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage ...
The high sensitivity and excellent timing accuracy of Geiger mode avalanche photodiodes makes them i...
The need to move forward in the knowledge of the subatomic world has stimulated the development of n...
In this paper, we present the implementation and preliminary evaluation of a new type of silicon sen...
The main purpose of this work is to investigate the characteristics of a 180nm CMOS technology with ...
The next generation of particle colliders will be characterized by linear lepton colliders, where th...
This work presents low noise readout circuits for silicon pixel detectors based on Geiger mode avala...
This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imagi...
We report on the development of 32 x 32 focal plane arrays (FPAs) based on InGaAsP/InP Geiger-mode a...
International audienceIn this paper, we present a two-layered silicon sensor working in Geiger-mode ...
Following our previous work which has led us to fabricate single pixels of geiger mode avalanche pho...
An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring ...