The performance of silicon diodes in high energy physics experiments deteriorates with irradiation. Performance properties of proton and pion irradiated samples are studied with CV/IV and TCT measurements. CV/IV measurements offer the possibility to study the full depletion voltage, leakage current and effective doping concentration. TCT measurements are used to investigate the electric field, charge collection and type inversion in function of the fluence. An annealing study is performed with one 9.64E13 p/cm2 irradiated sample up to a total annealing time of 1167 min at 60C
The aim of this work is the development of radiation hard detectors for very high luminosity collide...
In the frame of the CMS tracker upgrade campaign the radiation damage of oxygen- rich n-type silicon...
The aim of this work is the development of radiation hard detectors for very high luminosity collide...
The performance of silicon diodes in high energy physics experiments deteriorates with irradiation. ...
Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant det...
Future high energy physics experiments will make large use of silicon detectors both for tracking an...
An annealing study was performed using TSC spectroscopy in addition to I-V/C-V measurements on proto...
This work provides a detailed study of signal formation in silicon detectors, with the emphasis on d...
Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation t...
Silicon particle detectors are used in several applications and will clearly require better hardness...
We report on the characterization of an AC-coupled, double-sided silicon strip detector, with fast b...
We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positivel...
For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to...
This work presents an overview of the most important mechanisms of radiation damage in silicon detec...
n+/p−/p+ pad detectors processed at the Microelectronics Center of Helsinki University of Technology...
The aim of this work is the development of radiation hard detectors for very high luminosity collide...
In the frame of the CMS tracker upgrade campaign the radiation damage of oxygen- rich n-type silicon...
The aim of this work is the development of radiation hard detectors for very high luminosity collide...
The performance of silicon diodes in high energy physics experiments deteriorates with irradiation. ...
Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant det...
Future high energy physics experiments will make large use of silicon detectors both for tracking an...
An annealing study was performed using TSC spectroscopy in addition to I-V/C-V measurements on proto...
This work provides a detailed study of signal formation in silicon detectors, with the emphasis on d...
Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation t...
Silicon particle detectors are used in several applications and will clearly require better hardness...
We report on the characterization of an AC-coupled, double-sided silicon strip detector, with fast b...
We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positivel...
For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to...
This work presents an overview of the most important mechanisms of radiation damage in silicon detec...
n+/p−/p+ pad detectors processed at the Microelectronics Center of Helsinki University of Technology...
The aim of this work is the development of radiation hard detectors for very high luminosity collide...
In the frame of the CMS tracker upgrade campaign the radiation damage of oxygen- rich n-type silicon...
The aim of this work is the development of radiation hard detectors for very high luminosity collide...
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