Influence of n$^{+}$ and p$^{+}$ doping on the lattice sites of implanted Fe in Si

We report on the lattice location of implanted $^{59}$Fe in n$^{+}$ and p$^{+}$ type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. While in n$^{+}$ type Si Fe prefers displaced bond-centered (BC) sites for annealing temperatures up to 600°C, changing to ideal substitutional sites above 700°C, in p$^{+}$ type Si, Fe prefers to be in displaced tetrahedral interstitial positions after all annealing steps. The dominant lattice sites of Fe in n$^{+}$ type Si therefore seem to be well characterized for all annealing temperatures by the incorporation of Fe into vacancy-related complexes, either into single vacancies which leads to Fe on ideal substitutional sites, or multiple vacancies, which leads to its incorporation near BC sites. In contrast, in p$^{+}$ type Si, the major fraction of Fe is clearly interstitial (near-T or ideal T) for all annealing temperatures. The formation and possible lattice sites of Fe in FeB pairs in p$^{+}$ Si are discussed. We also address the relevance of our findings for the understanding of the gettering effects caused by radiation damage or P-diffusion, the latter involving n$^{+}$ doped regions